| Presentation | 1999/10/22 Reduction of Etch Pit Density in GaN by Regrowth on Step Structure M. Ishida, K. Orita, O. Imafuji, M. Yuri, T. Sugino, K. Itoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We found that low-dislocation-density regions are formed in a GaN layer regrown on step structure. We also observed that growth front of the regrown GaN layer on the step region shows facet planes and that threading dislocations propagete off from the c-axis in that region. By employing the present regrowth technology on periodical groove structure twice, the threading dislocations in the regrown GaN were uniformly reduced down to 6.3×10^6cm^<-2>. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Threading dislocation / Etch pit / Regrowth / Step structure / Transmission electron microscopy (TEM) |
| Paper # | CPM99-112 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of Etch Pit Density in GaN by Regrowth on Step Structure |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Threading dislocation |
| Keyword(3) | Etch pit |
| Keyword(4) | Regrowth |
| Keyword(5) | Step structure |
| Keyword(6) | Transmission electron microscopy (TEM) |
| 1st Author's Name | M. Ishida |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation() |
| 2nd Author's Name | K. Orita |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation |
| 3rd Author's Name | O. Imafuji |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation |
| 4th Author's Name | M. Yuri |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation |
| 5th Author's Name | T. Sugino |
| 5th Author's Affiliation | Faculty of Engineering, Osaka University |
| 6th Author's Name | K. Itoh |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation |
| Date | 1999/10/22 |
| Paper # | CPM99-112 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |