| Presentation | 1999/10/22 Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates A. Atsushi Yamaguchi, Yasunori Mochizuki, Masashi Mizuta, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the recombination mechanism in FIELO-GaN and InGaN quantum wells (QWs) on FIELO substrates by time-resolved and temperature-dependent photoluminescence measurements. It is found that the nonradiative defect densities in FIELO-GaN films are much smaller than those in MOVPE-GaN films on sapphire substrates. It is also found, for InGaN-QW, the emission efficiency is determined by not only the defect density but the compositional fluctuation. We have proposed a model to evaluate separately these two factors from the optical measurements. From this analysis, it is shown that both the defect density and the fluctuation are largely reduced in QW on FIELO substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FIELO / GaN / InGaN quantum well / nonradiative center / dislocation / compositional fluctuation |
| Paper # | CPM99-111 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates |
| Sub Title (in English) | |
| Keyword(1) | FIELO |
| Keyword(2) | GaN |
| Keyword(3) | InGaN quantum well |
| Keyword(4) | nonradiative center |
| Keyword(5) | dislocation |
| Keyword(6) | compositional fluctuation |
| 1st Author's Name | A. Atsushi Yamaguchi |
| 1st Author's Affiliation | Fundamental Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Yasunori Mochizuki |
| 2nd Author's Affiliation | Fundamental Research Laboratories, NEC Corporation |
| 3rd Author's Name | Masashi Mizuta |
| 3rd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| Date | 1999/10/22 |
| Paper # | CPM99-111 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |