Presentation | 1999/10/22 Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Kazumasa Hiramatsu, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ELO GaN using W mask has been performed by low pressure MOVPE and atmospheric HVPE. For the growth by low pressure MOVPE, the W buried structure is successfully obtained by two step ELO technique. Crystal and optical properties of ELO GaN using W mask via HVPE have been characterized by X-ray diffraction and cathodoluminescence. The tilts of c-axis of ELO GaN using W mask is much smaller than that of ELO GaN using SiO_2 mask. Uniform bound excitonic emission is observed from ELO GaN using W mask. It is found that the quality of ELO GaN using W mask is much better than that of ELO GaN using SiO_2 mask. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / selective area growth / epitaxial lateral overgrowth(ELO) / tungsten / MOVPE / HVPE / CL |
Paper # | CPM99-109 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 1999/10/22(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Selective Area Growth and Epitaxial Lateral Overgrowth of GaN |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | selective area growth |
Keyword(3) | epitaxial lateral overgrowth(ELO) |
Keyword(4) | tungsten |
Keyword(5) | MOVPE |
Keyword(6) | HVPE |
Keyword(7) | CL |
1st Author's Name | Kazumasa Hiramatsu |
1st Author's Affiliation | Department of Electrical and Electronic Engineering, Mie University() |
Date | 1999/10/22 |
Paper # | CPM99-109 |
Volume (vol) | vol.99 |
Number (no) | 379 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |