Presentation 1999/10/22
Selective Area Growth and Epitaxial Lateral Overgrowth of GaN
Kazumasa Hiramatsu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) ELO GaN using W mask has been performed by low pressure MOVPE and atmospheric HVPE. For the growth by low pressure MOVPE, the W buried structure is successfully obtained by two step ELO technique. Crystal and optical properties of ELO GaN using W mask via HVPE have been characterized by X-ray diffraction and cathodoluminescence. The tilts of c-axis of ELO GaN using W mask is much smaller than that of ELO GaN using SiO_2 mask. Uniform bound excitonic emission is observed from ELO GaN using W mask. It is found that the quality of ELO GaN using W mask is much better than that of ELO GaN using SiO_2 mask.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / selective area growth / epitaxial lateral overgrowth(ELO) / tungsten / MOVPE / HVPE / CL
Paper # CPM99-109
Date of Issue

Conference Information
Committee CPM
Conference Date 1999/10/22(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Selective Area Growth and Epitaxial Lateral Overgrowth of GaN
Sub Title (in English)
Keyword(1) GaN
Keyword(2) selective area growth
Keyword(3) epitaxial lateral overgrowth(ELO)
Keyword(4) tungsten
Keyword(5) MOVPE
Keyword(6) HVPE
Keyword(7) CL
1st Author's Name Kazumasa Hiramatsu
1st Author's Affiliation Department of Electrical and Electronic Engineering, Mie University()
Date 1999/10/22
Paper # CPM99-109
Volume (vol) vol.99
Number (no) 379
Page pp.pp.-
#Pages 6
Date of Issue