Presentation 1999/10/21
Fabrication of HBT with buried tungsten mesh used as a collector electrode
T. Arai, Y. Harada, H. Tobita, Y. Miyamoto, K. Furuya,
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Abstract(in English) This paper reports the fabrication process of buried metal heterojunction bipolar transistor, in which buried metal works as a schottky collector electrode and can reduce the total base-collector capacitance. In buried growth using OMVPF, 1μm wide tungsten stripes were buried by a 1.1μm thick InP layer under 600℃ as a growth temperature, 460 as a V/III ratio and 28 nm/min as a growth rate. In the nano-fabrication of tungsten, 140 nm pitch tungsten electrodes were fabricated by novel metal-stencil liftoff. To show the transistor operation of the device with the same epitaxial layers of BM-HBT, we fabricated an InP-based HBT with buried tungsten mesh replacing the subcollector layer. 12 as a current gain was measured from the common-emitter collector I-V characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) BM-HBT / GaInAs/InP HBT / Buried growth / OMVPE / Metal-stencil liftoff / Tungsten
Paper # CPM99-107
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Conference Information
Committee CPM
Conference Date 1999/10/21(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of HBT with buried tungsten mesh used as a collector electrode
Sub Title (in English)
Keyword(1) BM-HBT
Keyword(2) GaInAs/InP HBT
Keyword(3) Buried growth
Keyword(4) OMVPE
Keyword(5) Metal-stencil liftoff
Keyword(6) Tungsten
1st Author's Name T. Arai
1st Author's Affiliation Department of Electrical and Electronic Engineering, Tokyo Institute of Technology()
2nd Author's Name Y. Harada
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
3rd Author's Name H. Tobita
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
4th Author's Name Y. Miyamoto
4th Author's Affiliation Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
5th Author's Name K. Furuya
5th Author's Affiliation Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
Date 1999/10/21
Paper # CPM99-107
Volume (vol) vol.99
Number (no) 378
Page pp.pp.-
#Pages 8
Date of Issue