| Presentation | 1999/10/21 Deep level observation in 3C-SiC grown on Si using HMDS M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen, S. Nishino, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | n-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (Hexamethyldisilane). In order to investigate relation of electronic defects with epilayer thickness, epilayers with various thickness were grown. Then we carried out DLTS measurement. As a result of their measurements, relatively thin epilayers showed many defects having activation energies distributed in a wide range, and relatively thick epilayers showed a defect having activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH_4 and C_3H_8. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HMDS / 3C-SiC / DLTS / epilayer thickness / electronic defect |
| Paper # | CPM99-106 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deep level observation in 3C-SiC grown on Si using HMDS |
| Sub Title (in English) | |
| Keyword(1) | HMDS |
| Keyword(2) | 3C-SiC |
| Keyword(3) | DLTS |
| Keyword(4) | epilayer thickness |
| Keyword(5) | electronic defect |
| 1st Author's Name | M. Kato |
| 1st Author's Affiliation | Nagoya Inst. Tech.() |
| 2nd Author's Name | M. Ichimura |
| 2nd Author's Affiliation | Nagoya Inst. Tech. |
| 3rd Author's Name | E. Arai |
| 3rd Author's Affiliation | Nagoya Inst. Tech. |
| 4th Author's Name | Y. Masuda |
| 4th Author's Affiliation | Kyoto Inst. Tech. |
| 5th Author's Name | Y. Chen |
| 5th Author's Affiliation | Kyoto Inst. Tech. |
| 6th Author's Name | S. Nishino |
| 6th Author's Affiliation | Kyoto Inst. Tech. |
| Date | 1999/10/21 |
| Paper # | CPM99-106 |
| Volume (vol) | vol.99 |
| Number (no) | 378 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |