Presentation | 1999/10/21 Growth of TlInGaAs/InP by gas source MBE A. Ayabe, H. Asahi, H. J. Lee, O. Maeda, K. Konishi, K. Asami, S. Gonda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | TlInGaAs (thallium indium gallium arsenide) quanternary layers are successfully grown on InP substrates by gas source molecular beam epitaxy. TlInGaAs is the alloy consisting of semimetal TlAs and semiconductor InGaAs. This new semiconductor material system was recently proposed by us for long wave length optical devices as well as the temperature insensitive wavelength laser diodes which is inportant for the WDM systems. This paper describes the growth characteristics of TlInGaAs and the very small temperature dependence of PL peak energy of as small as 0.03meV/K, which is much smaller than that of InGaAsP/InP DFB laser diodes. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | thallium alloy / TlInGaAs / long wavelength laser diode / temperature-independent band gap |
Paper # | CPM99-105 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1999/10/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of TlInGaAs/InP by gas source MBE |
Sub Title (in English) | |
Keyword(1) | thallium alloy |
Keyword(2) | TlInGaAs |
Keyword(3) | long wavelength laser diode |
Keyword(4) | temperature-independent band gap |
1st Author's Name | A. Ayabe |
1st Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University() |
2nd Author's Name | H. Asahi |
2nd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
3rd Author's Name | H. J. Lee |
3rd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
4th Author's Name | O. Maeda |
4th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
5th Author's Name | K. Konishi |
5th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
6th Author's Name | K. Asami |
6th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
7th Author's Name | S. Gonda |
7th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
Date | 1999/10/21 |
Paper # | CPM99-105 |
Volume (vol) | vol.99 |
Number (no) | 378 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |