Presentation 1999/10/21
Growth of TlInGaAs/InP by gas source MBE
A. Ayabe, H. Asahi, H. J. Lee, O. Maeda, K. Konishi, K. Asami, S. Gonda,
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Abstract(in English) TlInGaAs (thallium indium gallium arsenide) quanternary layers are successfully grown on InP substrates by gas source molecular beam epitaxy. TlInGaAs is the alloy consisting of semimetal TlAs and semiconductor InGaAs. This new semiconductor material system was recently proposed by us for long wave length optical devices as well as the temperature insensitive wavelength laser diodes which is inportant for the WDM systems. This paper describes the growth characteristics of TlInGaAs and the very small temperature dependence of PL peak energy of as small as 0.03meV/K, which is much smaller than that of InGaAsP/InP DFB laser diodes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thallium alloy / TlInGaAs / long wavelength laser diode / temperature-independent band gap
Paper # CPM99-105
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Committee CPM
Conference Date 1999/10/21(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of TlInGaAs/InP by gas source MBE
Sub Title (in English)
Keyword(1) thallium alloy
Keyword(2) TlInGaAs
Keyword(3) long wavelength laser diode
Keyword(4) temperature-independent band gap
1st Author's Name A. Ayabe
1st Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University()
2nd Author's Name H. Asahi
2nd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
3rd Author's Name H. J. Lee
3rd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
4th Author's Name O. Maeda
4th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
5th Author's Name K. Konishi
5th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
6th Author's Name K. Asami
6th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
7th Author's Name S. Gonda
7th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
Date 1999/10/21
Paper # CPM99-105
Volume (vol) vol.99
Number (no) 378
Page pp.pp.-
#Pages 6
Date of Issue