Presentation 1999/10/21
Characterization of Interface Roughness of V-grooved AlGsAs/GsAs Quantum Wires Using Atomic Force Microscopy and Micro-photoluminescence
Xue-Lun Wang, Mutsuo Ogura, Valia Voliotis, Roger Grousson,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The effects of NH_4OH:H_2O_2:H_2O etching treatment of V-grooved GaAs substrate on the improvement of heterointerface uniformity of V-grooved AlGaAs/GaAs quantum wires (QWRs) were investigated by atomic force microscopy and micro-photoluminescence measurements. It is found that surface roughness on the initial V-grooved substrate generated during V-groove preparation processes can be greatly reduced, and the heterointerface uniformity of the grown AlGaAs/GaAs QWRs can be greatly improved by the use of NH_4OH etching treatment.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) V-grooved substrate / interface roughness / quantum wire / etching treatment / GaAs
Paper # CPM99-104
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Committee CPM
Conference Date 1999/10/21(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of Interface Roughness of V-grooved AlGsAs/GsAs Quantum Wires Using Atomic Force Microscopy and Micro-photoluminescence
Sub Title (in English)
Keyword(1) V-grooved substrate
Keyword(2) interface roughness
Keyword(3) quantum wire
Keyword(4) etching treatment
Keyword(5) GaAs
1st Author's Name Xue-Lun Wang
1st Author's Affiliation Electrotechnical Laboratory()
2nd Author's Name Mutsuo Ogura
2nd Author's Affiliation Electrotechnical Laboratory
3rd Author's Name Valia Voliotis
3rd Author's Affiliation Groupe de Physique des Solides, CNRS
4th Author's Name Roger Grousson
4th Author's Affiliation Groupe de Physique des Solides, CNRS
Date 1999/10/21
Paper # CPM99-104
Volume (vol) vol.99
Number (no) 378
Page pp.pp.-
#Pages 7
Date of Issue