Presentation | 1999/10/21 Fabrication of InAs dots including Mn atoms by MOMBE and their properties Y. K. Zhou, H. Asahi, J. Asakura, S. Okumura, K. Asami, S. Gonda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | InAs quantum dot structures including Mn atoms are fabricated on GaAs substrate by metalorganic molecular beam epitaxy (MOMBE) method. Mn atoms are first deposited on GaAs substrate and InAs dots are formed at this Mn atoms nuclei using TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) sources. Large size InAs dots including Mn atoms as well as Stranski-Krastanov (S-K) mode-grown small size InAs dots are formed on the surface. The small size InAs dots are subsequently removed by in situ etching with BDMAAsCl (bisdimethylaminoarsenicchloride), and only InAs dots including Mn atoms are left. These are confirmed by atomic force microscopy (AFM) and magnetic force microscopy (MFM) measurements. The magnetization properties are measured with a SQUID (superconducting quantum interference device) magnetometor and it is found that the easy axis of magnetization for InAs dots including Mn atoms is perpendicular to the GaAs surface. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InAs / Quantum dot / Mn / MOMBE / AFM / MFM / SQUID |
Paper # | CPM99-102 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1999/10/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Vice Chair | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of InAs dots including Mn atoms by MOMBE and their properties |
Sub Title (in English) | |
Keyword(1) | InAs |
Keyword(2) | Quantum dot |
Keyword(3) | Mn |
Keyword(4) | MOMBE |
Keyword(5) | AFM |
Keyword(6) | MFM |
Keyword(7) | SQUID |
1st Author's Name | Y. K. Zhou |
1st Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University() |
2nd Author's Name | H. Asahi |
2nd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
3rd Author's Name | J. Asakura |
3rd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
4th Author's Name | S. Okumura |
4th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
5th Author's Name | K. Asami |
5th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
6th Author's Name | S. Gonda |
6th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka University |
Date | 1999/10/21 |
Paper # | CPM99-102 |
Volume (vol) | vol.99 |
Number (no) | 378 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |