Presentation 1999/10/21
Fabrication of InAs dots including Mn atoms by MOMBE and their properties
Y. K. Zhou, H. Asahi, J. Asakura, S. Okumura, K. Asami, S. Gonda,
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Abstract(in English) InAs quantum dot structures including Mn atoms are fabricated on GaAs substrate by metalorganic molecular beam epitaxy (MOMBE) method. Mn atoms are first deposited on GaAs substrate and InAs dots are formed at this Mn atoms nuclei using TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) sources. Large size InAs dots including Mn atoms as well as Stranski-Krastanov (S-K) mode-grown small size InAs dots are formed on the surface. The small size InAs dots are subsequently removed by in situ etching with BDMAAsCl (bisdimethylaminoarsenicchloride), and only InAs dots including Mn atoms are left. These are confirmed by atomic force microscopy (AFM) and magnetic force microscopy (MFM) measurements. The magnetization properties are measured with a SQUID (superconducting quantum interference device) magnetometor and it is found that the easy axis of magnetization for InAs dots including Mn atoms is perpendicular to the GaAs surface.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAs / Quantum dot / Mn / MOMBE / AFM / MFM / SQUID
Paper # CPM99-102
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Conference Information
Committee CPM
Conference Date 1999/10/21(1days)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of InAs dots including Mn atoms by MOMBE and their properties
Sub Title (in English)
Keyword(1) InAs
Keyword(2) Quantum dot
Keyword(3) Mn
Keyword(4) MOMBE
Keyword(5) AFM
Keyword(6) MFM
Keyword(7) SQUID
1st Author's Name Y. K. Zhou
1st Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University()
2nd Author's Name H. Asahi
2nd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
3rd Author's Name J. Asakura
3rd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
4th Author's Name S. Okumura
4th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
5th Author's Name K. Asami
5th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
6th Author's Name S. Gonda
6th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
Date 1999/10/21
Paper # CPM99-102
Volume (vol) vol.99
Number (no) 378
Page pp.pp.-
#Pages 6
Date of Issue