| Presentation | 1999/10/15 Properties of ITO thin films sputter-deposited by using various kinds of rare gases Ryoma Ohki, Yoichi Hoshi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An rf-dc coupled magnetron sputtering system was used to perform the sputter-deposition of the films at a low sputtering voltage as low as 100 V. In this study, Kr or Xe gas was used as a sputtering gas instead of Ar gas to deposit the ITO thin films with lower resistivity at a temperature below 50 ℃. As a result, it was found that the crystallization in the ITO films deposited by using Kr and Xe gas was suppressed significantly and the films deposited in Xe gas had amorphous structure. These films had a lower resistivity than the films deposited by using Ar gas, since the hall mobility of the films had a larger value. This was thought to be caused by the reduction of the amount of high energy particles which bombard film surface during sputtering by using Kr or Xe gas. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ITO / thin film / low voltage sputtering / Kr gas / Xe gas |
| Paper # | CPM99-91 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of ITO thin films sputter-deposited by using various kinds of rare gases |
| Sub Title (in English) | |
| Keyword(1) | ITO |
| Keyword(2) | thin film |
| Keyword(3) | low voltage sputtering |
| Keyword(4) | Kr gas |
| Keyword(5) | Xe gas |
| 1st Author's Name | Ryoma Ohki |
| 1st Author's Affiliation | Electronic Engineering, Faculty of Engineering, Tokyo Institute of Polytechnics() |
| 2nd Author's Name | Yoichi Hoshi |
| 2nd Author's Affiliation | Electronic Engineering, Faculty of Engineering, Tokyo Institute of Polytechnics |
| Date | 1999/10/15 |
| Paper # | CPM99-91 |
| Volume (vol) | vol.99 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |