| Presentation | 1999/10/15 Epitaxial Growth of AlN Films by ECR Plasma Enhanced MOCVD Suguru HOSHINO, Yuzuru NARITA, Kanji YASUI, Masashi Akahane, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Hexagonal AlN films were epitaxially grown on (0001) sapphire substrate by electron-cyclotron-resonance plasma enhanced metalorganic chemical vapor deposition (ECRMOCVD) using trimethylalminum (TMA) and ammonia (NH_3) as source gases. We investigated the influences of the initial treatments of sapphire substrates, such as initial nitridation and the deposition of low-temperature AlN buffer layer (LT-AlN layer), upon the surface morphology and the crystallinity of epitaxial films. It was found that LT-AlN layer deposited at temperatures around 600℃ and nitridation improved the crystallinity and the crystal orientation of AlN films. Furthermore, AlN films grown after thermal nitridation showed more excellent surface morphology than those grown after plasma nitridation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / epitaxial growth / ECR plasma / MOCVD / nitridation / buffer layer |
| Paper # | CPM99-87 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial Growth of AlN Films by ECR Plasma Enhanced MOCVD |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | epitaxial growth |
| Keyword(3) | ECR plasma |
| Keyword(4) | MOCVD |
| Keyword(5) | nitridation |
| Keyword(6) | buffer layer |
| 1st Author's Name | Suguru HOSHINO |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Yuzuru NARITA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Kanji YASUI |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 4th Author's Name | Masashi Akahane |
| 4th Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 1999/10/15 |
| Paper # | CPM99-87 |
| Volume (vol) | vol.99 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |