Presentation 1999/10/29
10 K operation of SFQ circuit using NbN film
H. Terai, Z. Wang,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have fabricated single-flux-quantum (SFQ) logic circuits operating at around 10 K by using NbN film with a critical temperature of around 16 K. The circuits were fabricated on 2 inch Si substrate based on NbN/AlN/NbN tunnel junctions with the critical current variation less than ±5% in the 976JJ array. We confirmed the correct operation of dc/SFQ and SFQ/dc converters up to 9.8 K. We also confirmed the correct operation of elementary cells such as a Confluence buffer and a T-Flip-Flop at 8.5 K. As the largest scale integrated circuit, an 8 bit shift resister with the 105 Josephson junction was successfully operated at 8.5 K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NbN / SFQ / NbN/AlN/NbN junction / 10 K operation / dc bias margin / Cu resistive layer
Paper # SCE99-31
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Committee SCE
Conference Date 1999/10/29(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 10 K operation of SFQ circuit using NbN film
Sub Title (in English)
Keyword(1) NbN
Keyword(2) SFQ
Keyword(3) NbN/AlN/NbN junction
Keyword(4) 10 K operation
Keyword(5) dc bias margin
Keyword(6) Cu resistive layer
1st Author's Name H. Terai
1st Author's Affiliation Kansai Advanced Research Center, Communications Research Laboratory()
2nd Author's Name Z. Wang
2nd Author's Affiliation Kansai Advanced Research Center, Communications Research Laboratory
Date 1999/10/29
Paper # SCE99-31
Volume (vol) vol.99
Number (no) 408
Page pp.pp.-
#Pages 6
Date of Issue