Presentation 1999/10/29
Characteristics of High-Tc SQUID magnetometer in static magnetic field
H. Oyama, S. Hirano, K. Yokosawa, M. Matsuda, S. Kuriki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to suppress the flux entry into YBa_2Cu_3O_<7-x> (YBCO) this film of dc SQUID, we have designed and fabricated SQUID magnetometers with a mesh structure having slots and holes. The magnetometer included flux dams within the pickup loop to suppress the flux entry by shielding current. Microstrips in the mesh structure have a width of 5 μm, but 12μm wide strips existed at the flux dam. In the field cooled case, we observed a flux sift caused by flux trapping in the V-Φ characteristics above 10μT. This threshold field agreed with that theoretically expected from the longest width of the YBCO film near the flux dam. When the applied field exceeded 0.14μT the flux dams opened and the flux entered into the pickup loop at an estimated critical current of 0.5mA. We observed that the critical current of the flux dams decreased with the applied field in a Fraunhofer pattern, where magnetic field enhancement at the weak link near the flux dam was suggested.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SQUID magnetometer / V-Φ characteristics / flux sift / flux dams
Paper # SCE99-22
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Conference Information
Committee SCE
Conference Date 1999/10/29(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of High-Tc SQUID magnetometer in static magnetic field
Sub Title (in English)
Keyword(1) SQUID magnetometer
Keyword(2) V-Φ characteristics
Keyword(3) flux sift
Keyword(4) flux dams
1st Author's Name H. Oyama
1st Author's Affiliation Research Institute for Electronic Science Hokkaido University()
2nd Author's Name S. Hirano
2nd Author's Affiliation Research Institute for Electronic Science Hokkaido University
3rd Author's Name K. Yokosawa
3rd Author's Affiliation Central Research Laboratory, Hitachi Ltd.
4th Author's Name M. Matsuda
4th Author's Affiliation Muroran Institute of Technology
5th Author's Name S. Kuriki
5th Author's Affiliation Research Institute for Electronic Science Hokkaido University
Date 1999/10/29
Paper # SCE99-22
Volume (vol) vol.99
Number (no) 408
Page pp.pp.-
#Pages 6
Date of Issue