Presentation | 1999/10/29 Characteristics of High-Tc SQUID magnetometer in static magnetic field H. Oyama, S. Hirano, K. Yokosawa, M. Matsuda, S. Kuriki, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to suppress the flux entry into YBa_2Cu_3O_<7-x> (YBCO) this film of dc SQUID, we have designed and fabricated SQUID magnetometers with a mesh structure having slots and holes. The magnetometer included flux dams within the pickup loop to suppress the flux entry by shielding current. Microstrips in the mesh structure have a width of 5 μm, but 12μm wide strips existed at the flux dam. In the field cooled case, we observed a flux sift caused by flux trapping in the V-Φ characteristics above 10μT. This threshold field agreed with that theoretically expected from the longest width of the YBCO film near the flux dam. When the applied field exceeded 0.14μT the flux dams opened and the flux entered into the pickup loop at an estimated critical current of 0.5mA. We observed that the critical current of the flux dams decreased with the applied field in a Fraunhofer pattern, where magnetic field enhancement at the weak link near the flux dam was suggested. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SQUID magnetometer / V-Φ characteristics / flux sift / flux dams |
Paper # | SCE99-22 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1999/10/29(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics of High-Tc SQUID magnetometer in static magnetic field |
Sub Title (in English) | |
Keyword(1) | SQUID magnetometer |
Keyword(2) | V-Φ characteristics |
Keyword(3) | flux sift |
Keyword(4) | flux dams |
1st Author's Name | H. Oyama |
1st Author's Affiliation | Research Institute for Electronic Science Hokkaido University() |
2nd Author's Name | S. Hirano |
2nd Author's Affiliation | Research Institute for Electronic Science Hokkaido University |
3rd Author's Name | K. Yokosawa |
3rd Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
4th Author's Name | M. Matsuda |
4th Author's Affiliation | Muroran Institute of Technology |
5th Author's Name | S. Kuriki |
5th Author's Affiliation | Research Institute for Electronic Science Hokkaido University |
Date | 1999/10/29 |
Paper # | SCE99-22 |
Volume (vol) | vol.99 |
Number (no) | 408 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |