Presentation 2000/1/20
High Gain HJFET-MMIC Amplifiers for Millimeter-wave with 0.13 μm Embedded Gate
Akio Wakejima, Yoichi Makino, Katsumi Yamanoguchi, Norihiko Samoto,
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Abstract(in English) High gain HJFET-MMICs with embedded gates in a SiO_2 film have been developed. A chemically amplified resist(CA resist)is employed as a dry-etching mask and SiO_2 openings, which determine gate length(Lg), are directly patterned by two-step dry-etching. Very small deviations both in Lg and threshold voltage are obtained. SiO_2 film thickness is optimized in order to reduce fringing gate capacitance. As a result, fabricated HJFETs(Lg=0.13 μm)exhibited high gain performance of 220 GHz f_. One-stage HJFET-MMIC amplifiers exhibited a high gain of over 10 dB, maximum output power of 200 mW / mm, and maximum power added efficiency of 22 % at 75 GHz.
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Keyword(in English) Millimeter-wave / HJFET / MMIC / Amplifier
Paper # ED99-278,MW99-202,ICD99-253
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Committee MW
Conference Date 2000/1/20(1days)
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Registration To Microwaves (MW)
Language JPN
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Title (in English) High Gain HJFET-MMIC Amplifiers for Millimeter-wave with 0.13 μm Embedded Gate
Sub Title (in English)
Keyword(1) Millimeter-wave
Keyword(2) HJFET
Keyword(3) MMIC
Keyword(4) Amplifier
1st Author's Name Akio Wakejima
1st Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation()
2nd Author's Name Yoichi Makino
2nd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
3rd Author's Name Katsumi Yamanoguchi
3rd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
4th Author's Name Norihiko Samoto
4th Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation
Date 2000/1/20
Paper # ED99-278,MW99-202,ICD99-253
Volume (vol) vol.99
Number (no) 557
Page pp.pp.-
#Pages 7
Date of Issue