Presentation 2000/1/20
Dielectric Resonator with Thin Film Layered Electrode and its Low Temperature Operation
N. Matsui, S. Hidaka, M. Nakano, J. Hattori, Y. Ishikawa,
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Abstract(in English) A novel low loss technology of the thin film layered electrode(TFLE)is proposed. The designing method of TFLE is described. We fabricated resonators using TFLE with conductor layer of up to 25 and confirmed that the ratio of conductor Q improved is 4.42 compared to a resonator using conventional single layer electrode. We also describe the designing method of TFLE for low temperature(Liquid Nitrogen Temperature)operation. The resonator using TFLE designed for low temperature operation with 5 layers has 2 times higher conductor Q than that of single layer electrode.
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Keyword(in English) TFLE / Dielectric Resonator / Liquid Nitrogen Temperature / Conductor Loss / Skin effect
Paper # ED99-272,MW99-196,ICD99-247
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Conference Date 2000/1/20(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Dielectric Resonator with Thin Film Layered Electrode and its Low Temperature Operation
Sub Title (in English)
Keyword(1) TFLE
Keyword(2) Dielectric Resonator
Keyword(3) Liquid Nitrogen Temperature
Keyword(4) Conductor Loss
Keyword(5) Skin effect
1st Author's Name N. Matsui
1st Author's Affiliation Murata Manufacturing Co., Ltd.()
2nd Author's Name S. Hidaka
2nd Author's Affiliation Murata Manufacturing Co., Ltd.
3rd Author's Name M. Nakano
3rd Author's Affiliation Murata Manufacturing Co., Ltd.
4th Author's Name J. Hattori
4th Author's Affiliation Murata Manufacturing Co., Ltd.
5th Author's Name Y. Ishikawa
5th Author's Affiliation Murata Manufacturing Co., Ltd.
Date 2000/1/20
Paper # ED99-272,MW99-196,ICD99-247
Volume (vol) vol.99
Number (no) 557
Page pp.pp.-
#Pages 6
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