Presentation 2000/1/19
High-Speed, Low-Power-Consumption InP/InGaAs HBT's Using a Novel Base-Metal Design
Minoru Ida, Shoji Yamahata, Hiroki Nakajima, Noriyuki Watanabe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We present a novel base-metal design which reduces the base-collector capacitance in InP / InGaAs HBTs. The new design can eliminate the capacitance at the base-via area without any additional steps to our baseline HBT fabrication process. In 0.8×1.6μm^2 emitter HBTs, the base-collector capacitance of the new design HBT is reduced by 43%. High-speed performance of 149-GHz f_T and 180-GHz f_ is achieved at the power consumption as low as 1 mW. These results are very attractive for high-speed and low-power-dissipation circuit applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InP / InGaAs / HBT / low-power-consumption / base-collector capacitance
Paper # ED99-262,MW99-186,ICD99-237
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Committee MW
Conference Date 2000/1/19(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Speed, Low-Power-Consumption InP/InGaAs HBT's Using a Novel Base-Metal Design
Sub Title (in English)
Keyword(1) InP
Keyword(2) InGaAs
Keyword(3) HBT
Keyword(4) low-power-consumption
Keyword(5) base-collector capacitance
1st Author's Name Minoru Ida
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name Shoji Yamahata
2nd Author's Affiliation NTT Photonics Laboratories
3rd Author's Name Hiroki Nakajima
3rd Author's Affiliation NTT Photonics Laboratories
4th Author's Name Noriyuki Watanabe
4th Author's Affiliation NTT Photonics Laboratories
Date 2000/1/19
Paper # ED99-262,MW99-186,ICD99-237
Volume (vol) vol.99
Number (no) 556
Page pp.pp.-
#Pages 6
Date of Issue