| Presentation | 2000/2/10 Novel STM probe assisted site-control of quantum dots with nanometer precision Hitoshi Nakamura, Shigeru Kohmoto, Tomonori Ishikawa, Kiyoshi Asakawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a novel site-control technique for strained quantum dots(QDs)based on nano-lithography using an STM integrated into a UHV STM / MBE multi-chamber system. A nano-scale deposit was formed on a GaAs surface by applying voltage between the GaAs surface and the tungsten tip of the STM. Since the deposit acted as a nono-mask, the subsequent GaAs growth formed a nono-hole just above the deposit. Subsequent InAs supply produced a QD on the hole site, and no QD was observed in any undesirable regions. We also observed the QD formation processes involved in the technique, based on step-by-step STM observations of the QD formation process. The observation directly revealed an InAs wetting layer formation with 1-ML thickness on the GaAs terraces followed by the QD formation in the Stranski-Krastanow growth mode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | quantum dots / site-control / scanning tunneling microscope / InAs/GaAs / wetting layer / Stranski-Krastanow growth mode |
| Paper # | ED99-313, SDM99-206 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel STM probe assisted site-control of quantum dots with nanometer precision |
| Sub Title (in English) | |
| Keyword(1) | quantum dots |
| Keyword(2) | site-control |
| Keyword(3) | scanning tunneling microscope |
| Keyword(4) | InAs/GaAs |
| Keyword(5) | wetting layer |
| Keyword(6) | Stranski-Krastanow growth mode |
| 1st Author's Name | Hitoshi Nakamura |
| 1st Author's Affiliation | The Femtosecond Technology Research Association(FESTA)() |
| 2nd Author's Name | Shigeru Kohmoto |
| 2nd Author's Affiliation | The Femtosecond Technology Research Association(FESTA) |
| 3rd Author's Name | Tomonori Ishikawa |
| 3rd Author's Affiliation | The Femtosecond Technology Research Association(FESTA) |
| 4th Author's Name | Kiyoshi Asakawa |
| 4th Author's Affiliation | The Femtosecond Technology Research Association(FESTA) |
| Date | 2000/2/10 |
| Paper # | ED99-313, SDM99-206 |
| Volume (vol) | vol.99 |
| Number (no) | 616 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |