Presentation 2000/2/10
Fabrication of GaN micro-structures on(111)Si by selective area growth by MOVPE
Y. Honda, Y. Ohtake, Y. Kawaguchi, M. Yamaguchi, N. Sawaki,
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Abstract(in English) Selective area growth(SAG)of stripe structure and hexagonal pyramids of GaN on a(111)Si substrate is studied with AlGaN intermediate layer. The crystalinity is much improved by the SAG as compared to that due to a conventional method. It is demonstrated that the formation process of the intermediate layer is the key issue to improve the optical properties as well as the crystalinity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / Selective area growth / MOVPE / microstructure
Paper # ED99-309, SDM99-202
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Committee ED
Conference Date 2000/2/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaN micro-structures on(111)Si by selective area growth by MOVPE
Sub Title (in English)
Keyword(1) GaN
Keyword(2) Selective area growth
Keyword(3) MOVPE
Keyword(4) microstructure
1st Author's Name Y. Honda
1st Author's Affiliation Nagoya University, Department of Electronics, Graduate School of Engineering()
2nd Author's Name Y. Ohtake
2nd Author's Affiliation Nagoya University, Department of Electronics, Graduate School of Engineering
3rd Author's Name Y. Kawaguchi
3rd Author's Affiliation Nagoya University, Department of Electronics, Graduate School of Engineering
4th Author's Name M. Yamaguchi
4th Author's Affiliation Nagoya University, Department of Electronics, Graduate School of Engineering
5th Author's Name N. Sawaki
5th Author's Affiliation Nagoya University, Department of Electronics, Graduate School of Engineering
Date 2000/2/10
Paper # ED99-309, SDM99-202
Volume (vol) vol.99
Number (no) 616
Page pp.pp.-
#Pages 8
Date of Issue