| Presentation | 2000/2/9 Transport properties of 2 dimensional electron gas channels with embedded InGaAs or InAlAs quantum dots Takuya Kawazu, Takeshi Noda, Kim Hoon, Yasushi Nagamune, Shinichi Hori, Jyunya Irisawa, Hiroyuki Sakaki, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | 10-nm scale self-assembled quantum dots (QDs) are attravtive materials for various device applications.For example, in memory and detector applications, the electron population in QDs is changed by electronic or photonic methods and the change is detected through the modulation of conductivity of a channel adjacent to QDs.In such applications, the infuluence of QDs on the transport properties of the channel must be quantitatively evaluated.Here, we invastigate several samples where self-assembled QDs are embedded in the vicinity of the channel and studied the mobility and the density of the 2D electrons in the channel.By muestigating transport data for samples with charged InGaAs QDs and those with InAlAs anti-QDs, we study the role of QD-induced strains and Coulomic potential and compara them with theory. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs/InAlAs / quantum dot / 2 dimensional electron / mobility / single hetero structure |
| Paper # | ED99-305,SDM99-198 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Transport properties of 2 dimensional electron gas channels with embedded InGaAs or InAlAs quantum dots |
| Sub Title (in English) | |
| Keyword(1) | InGaAs/InAlAs |
| Keyword(2) | quantum dot |
| Keyword(3) | 2 dimensional electron |
| Keyword(4) | mobility |
| Keyword(5) | single hetero structure |
| 1st Author's Name | Takuya Kawazu |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Takeshi Noda |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Kim Hoon |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 4th Author's Name | Yasushi Nagamune |
| 4th Author's Affiliation | Electrotechnical Laboratory |
| 5th Author's Name | Shinichi Hori |
| 5th Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 6th Author's Name | Jyunya Irisawa |
| 6th Author's Affiliation | Institute of Industrial Science, University ot Tokyo |
| 7th Author's Name | Hiroyuki Sakaki |
| 7th Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2000/2/9 |
| Paper # | ED99-305,SDM99-198 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |