Presentation 2000/2/9
Observation of N-shaped negative differential resistance in InGaAs quantum wire FET
J.Kim S, T. Sugaya, M. Ogura, Y. Sugiyama,
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Abstract(in English) N-shaped negative differential resistance(NDR)with high peak-to-valley current ratio(PVR)and low onset voltage(V_NDR)are clearly observed in 50-nm gate ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWR-FET).The characteristic of NDR is improved more than that of previously reported NDR devices.The low onset voltage of NDR(V_NDR)and its dependence on the gate voltage are attributed to the real space transfer of channel carriers into a barrier layer underneath the gate by field-assisted tunneling.The NDR characteristic of the QWR-FET is enhanced compared with that of InGaAs/InAlAs quantum well field-effect transistor(QW-FET).The narrower channel-width and shorter gate-length effectively improve in the PVR and V_NDR.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum wire / Negative differential resistance / Real space transfer / FET
Paper # ED99-304,SDM99-197
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Committee ED
Conference Date 2000/2/9(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of N-shaped negative differential resistance in InGaAs quantum wire FET
Sub Title (in English)
Keyword(1) Quantum wire
Keyword(2) Negative differential resistance
Keyword(3) Real space transfer
Keyword(4) FET
1st Author's Name J.Kim S
1st Author's Affiliation ETL:NEDO:CREST()
2nd Author's Name T. Sugaya
2nd Author's Affiliation ETL:CREST
3rd Author's Name M. Ogura
3rd Author's Affiliation ETL:CREST
4th Author's Name Y. Sugiyama
4th Author's Affiliation ETL
Date 2000/2/9
Paper # ED99-304,SDM99-197
Volume (vol) vol.99
Number (no) 615
Page pp.pp.-
#Pages 6
Date of Issue