Presentation | 2000/2/9 Observation of N-shaped negative differential resistance in InGaAs quantum wire FET J.Kim S, T. Sugaya, M. Ogura, Y. Sugiyama, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | N-shaped negative differential resistance(NDR)with high peak-to-valley current ratio(PVR)and low onset voltage(V_NDR)are clearly observed in 50-nm gate ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWR-FET).The characteristic of NDR is improved more than that of previously reported NDR devices.The low onset voltage of NDR(V_NDR)and its dependence on the gate voltage are attributed to the real space transfer of channel carriers into a barrier layer underneath the gate by field-assisted tunneling.The NDR characteristic of the QWR-FET is enhanced compared with that of InGaAs/InAlAs quantum well field-effect transistor(QW-FET).The narrower channel-width and shorter gate-length effectively improve in the PVR and V_NDR. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum wire / Negative differential resistance / Real space transfer / FET |
Paper # | ED99-304,SDM99-197 |
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Conference Information | |
Committee | ED |
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Conference Date | 2000/2/9(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Observation of N-shaped negative differential resistance in InGaAs quantum wire FET |
Sub Title (in English) | |
Keyword(1) | Quantum wire |
Keyword(2) | Negative differential resistance |
Keyword(3) | Real space transfer |
Keyword(4) | FET |
1st Author's Name | J.Kim S |
1st Author's Affiliation | ETL:NEDO:CREST() |
2nd Author's Name | T. Sugaya |
2nd Author's Affiliation | ETL:CREST |
3rd Author's Name | M. Ogura |
3rd Author's Affiliation | ETL:CREST |
4th Author's Name | Y. Sugiyama |
4th Author's Affiliation | ETL |
Date | 2000/2/9 |
Paper # | ED99-304,SDM99-197 |
Volume (vol) | vol.99 |
Number (no) | 615 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |