| Presentation | 2000/2/9 Microscopic Analyses on InGaAs Ridge Quantum Wire Structures Grown by Selective Molecular Beam Epitaxy Jiang C, H. Fujikura, T. Muranaka, H. Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | From SEM, AFM and TEM observations, nonuniformity of the InGaAs ridge quantum wires (QWRs) by selective MBE growth was found to mainly due to the waving of underlying InAlAs ridge caused by formation or irregular InGaAs islands at the intial stage of the InGaAs buffer layer growth.The island formation and ridge waving were completely removed by using optimized substrate cleaning and growth procedure.Formation of a verical region with low In composition having a width of 10-20 nm and bisecting the whole QWR structure including the QWR itself was observed by TEM / EDX analysis.The conventional adatom diffusion theory alone can not explain this phenomenon and it is necessary to take account of effects of a curvature induced capillarity and a free energy of alloy mixing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Selective MBE / Quantum wires / InGaAs/InAlAs / uniformity / alloy composition / SEM / AFM / TEM |
| Paper # | ED99-303,SDM99-196 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Microscopic Analyses on InGaAs Ridge Quantum Wire Structures Grown by Selective Molecular Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Selective MBE |
| Keyword(2) | Quantum wires |
| Keyword(3) | InGaAs/InAlAs |
| Keyword(4) | uniformity |
| Keyword(5) | alloy composition |
| Keyword(6) | SEM |
| Keyword(7) | AFM |
| Keyword(8) | TEM |
| 1st Author's Name | Jiang C |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics:Graduate School of Electronics and Information Engineering, Hokkaido University() |
| 2nd Author's Name | H. Fujikura |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics:Graduate School of Electronics and Information Engineering, Hokkaido University |
| 3rd Author's Name | T. Muranaka |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics:Graduate School of Electronics and Information Engineering, Hokkaido University |
| 4th Author's Name | H. Hasegawa |
| 4th Author's Affiliation | Research Center for Interface Quantum Electronics:Graduate School of Electronics and Information Engineering, Hokkaido University |
| Date | 2000/2/9 |
| Paper # | ED99-303,SDM99-196 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |