Presentation | 2000/2/9 An Electron Wave Interference Transistor with a Novel Recess-Etched Grating Structure Fabricated Using Electron Beam Lithography Tomohiro Murata, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutati, Tetsuyoshi Ishii, Toshiaki Tamamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have successfully fabricated electron wave interference transistors (EWITs) with a novel recess-etched grating structure.Fine patterns with 60-nm period were fabricated by 100-keV electron beam (EB) lithography with a novel nanocomposite resist.A clear transconductance (g_m) oscillation was observed in g_m-V_G characteristics of the EWITs at temperatures up to 50 K.It was confirmed by analyzing the index of g_m peaks that the observed g_m oscillation was due to the electron wave interference caused by the periodic potential modulation in the channel produced by the recess-etched grating under the gate.The calculation of the transmission coefficient of electrons in the channel of the EWIT shows that it is possible to observe clear interference phenomena if the number of the grating is larger than 10. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Electron beam lithography / electron wave interference / transconductance oscillation / transmission coefficient |
Paper # | ED99-302,SDM99-195 |
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Conference Information | |
Committee | ED |
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Conference Date | 2000/2/9(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | An Electron Wave Interference Transistor with a Novel Recess-Etched Grating Structure Fabricated Using Electron Beam Lithography |
Sub Title (in English) | |
Keyword(1) | Electron beam lithography |
Keyword(2) | electron wave interference |
Keyword(3) | transconductance oscillation |
Keyword(4) | transmission coefficient |
1st Author's Name | Tomohiro Murata |
1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
2nd Author's Name | Shigeru Kishimoto |
2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
3rd Author's Name | Koichi Maezawa |
3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
4th Author's Name | Takashi Mizutati |
4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
5th Author's Name | Tetsuyoshi Ishii |
5th Author's Affiliation | NTT Basic Research Laboratories |
6th Author's Name | Toshiaki Tamamura |
6th Author's Affiliation | NTT Basic Research Laboratories |
Date | 2000/2/9 |
Paper # | ED99-302,SDM99-195 |
Volume (vol) | vol.99 |
Number (no) | 615 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |