| Presentation | 2000/2/9 Carrier Transport in Ultrasmall MOSFETs Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have characterized carrier transport in MOSFETs below the deca-nanometer scale using ultrasmall test-devices based on 10-nm-level lithography.We directly detected hot electrons that run across the channel without sufficient energy-relaxation, and estimated the relaxation-length to be around 25 nm.At the channel length below 10 nm electrons in the source directly tunneled to the drain, causing the degradation of the subthreshold swing.We also showed that the direct tunneling current will exceed the thermal current and will become detrimental to low-voltage / power operation of logic LSIs below 5-nm generations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon / hot electron / tunneling / subthreshold swing |
| Paper # | ED99-300,SDM99-193 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Carrier Transport in Ultrasmall MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | hot electron |
| Keyword(3) | tunneling |
| Keyword(4) | subthreshold swing |
| 1st Author's Name | Hisao Kawaura |
| 1st Author's Affiliation | Fundamental Research Labs., NEC Corporation() |
| 2nd Author's Name | Toshitsugu Sakamoto |
| 2nd Author's Affiliation | Fundamental Research Labs., NEC Corporation |
| 3rd Author's Name | Toshio Baba |
| 3rd Author's Affiliation | Fundamental Research Labs., NEC Corporation |
| Date | 2000/2/9 |
| Paper # | ED99-300,SDM99-193 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |