Presentation 2000/2/9
A Directional Current Switch Using Integrated Si SETs
Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A directional current switch using integrated SETs is successfully demonstrated.In order to control the peak positions of the Coulomb blockade oscillations, memory effect based on Si nano-crystal floating gates is utilized without using additional gate electrodes.Two SETs are integrated under a common gate electrode, and the peak positions of the two SETs are independently controlled by charge injection / ejection at asymmetrical bias condition.This technique is very important for practical integration of SETs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SET / Coulomb blockade / Si nano-crystal / peak position control / current switch / SET logic
Paper # ED99-299,SDM99-192
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Committee ED
Conference Date 2000/2/9(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Directional Current Switch Using Integrated Si SETs
Sub Title (in English)
Keyword(1) SET
Keyword(2) Coulomb blockade
Keyword(3) Si nano-crystal
Keyword(4) peak position control
Keyword(5) current switch
Keyword(6) SET logic
1st Author's Name Nobuyoshi Takahashi
1st Author's Affiliation Institute of Industrial Science, the University of Tokyo()
2nd Author's Name Hiroki Ishikuro
2nd Author's Affiliation Institute of Industrial Science, the University of Tokyo
3rd Author's Name Toshiro Hiramoto
3rd Author's Affiliation VLSI Design and Education Center, the University of Tokyo
Date 2000/2/9
Paper # ED99-299,SDM99-192
Volume (vol) vol.99
Number (no) 615
Page pp.pp.-
#Pages 6
Date of Issue