| Presentation | 2000/2/9 Si complementary single-electron inverter : Fabrication using V-PADOX and measurements of its characteristics Y. Ono, Y. Takahashi, K. Yamazaki, M. Nagase, H. Namatsu, K. Kurihara, K. Murase, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A method of fabricating logic-IC-oriented single-electron transistors(SETs), and its application to the fabrication of logic circuits are presented.The method, which we call vertical pattern-dependent oxidation(V-PADOX), enables the formation of twin SETs in a tiny area on a silicon-on-insulator substrate.By using the twin SETs, a complementary single-electron inverter, an elemental circuit for single-electron CMOS-type logic, is fabricated.The circuit occupies a very small area:100 x 100 nm for each SET.We demonstrated, at 27 K, input-output transfer with a voltage gain larger than unity and inversion operation for input voltage signals. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single electron tunneling / Coulomb blockade / SOI / inverter / oxidation |
| Paper # | ED99-298,SDM99-191 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Si complementary single-electron inverter : Fabrication using V-PADOX and measurements of its characteristics |
| Sub Title (in English) | |
| Keyword(1) | single electron tunneling |
| Keyword(2) | Coulomb blockade |
| Keyword(3) | SOI |
| Keyword(4) | inverter |
| Keyword(5) | oxidation |
| 1st Author's Name | Y. Ono |
| 1st Author's Affiliation | NTT Basic Research Laboratories() |
| 2nd Author's Name | Y. Takahashi |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | K. Yamazaki |
| 3rd Author's Affiliation | NTT Basic Research Laboratories |
| 4th Author's Name | M. Nagase |
| 4th Author's Affiliation | NTT Basic Research Laboratories |
| 5th Author's Name | H. Namatsu |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| 6th Author's Name | K. Kurihara |
| 6th Author's Affiliation | NTT Basic Research Laboratories |
| 7th Author's Name | K. Murase |
| 7th Author's Affiliation | NTT Basic Research Laboratories |
| Date | 2000/2/9 |
| Paper # | ED99-298,SDM99-191 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |