Presentation 2000/2/9
Si Dot Thin-Film-Transistor Memory
Kazumasa Nomoto, Pal Gosain Dharam, Takashi Noguchi, Setsuo Usui, Yoshifumi Mori,
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Abstract(in English) We fabricated a novel poly-Si thin-film-transistor based memory with a Si-nano-crystal(Si dot)floating gate.Although we employed a quartz as a substrate, all the fabrication process has been done at a substrate temperature below 400°C which is compatible with the use of a glass substrate.We have developed a method in which XeCl excimer laser annealing of a Si-rich oxide film induced a separation of stoichiometrically excess Si as Si-nano-crystals.A device showed threshold voltage shift of ±2 V with gate-voltage pulse of ±20 V, 10 ms.The data retention time was 10~3s and the threshold voltage shift did not decrease up to 10~4 write / erase cycles.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) poly-Si / Si-nano-crystal / XeCl excimer laser / thin film transistor / memory
Paper # ED99-296,SDM99-189
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Committee ED
Conference Date 2000/2/9(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Si Dot Thin-Film-Transistor Memory
Sub Title (in English)
Keyword(1) poly-Si
Keyword(2) Si-nano-crystal
Keyword(3) XeCl excimer laser
Keyword(4) thin film transistor
Keyword(5) memory
1st Author's Name Kazumasa Nomoto
1st Author's Affiliation Frontier Science Laboratory, Sony Corporation()
2nd Author's Name Pal Gosain Dharam
2nd Author's Affiliation Frontier Science Laboratory, Sony Corporation
3rd Author's Name Takashi Noguchi
3rd Author's Affiliation Frontier Science Laboratory, Sony Corporation
4th Author's Name Setsuo Usui
4th Author's Affiliation Frontier Science Laboratory, Sony Corporation
5th Author's Name Yoshifumi Mori
5th Author's Affiliation Frontier Science Laboratory, Sony Corporation
Date 2000/2/9
Paper # ED99-296,SDM99-189
Volume (vol) vol.99
Number (no) 615
Page pp.pp.-
#Pages 8
Date of Issue