| Presentation | 2000/2/9 Sub-μm Si Single-Electron Tunneling Devices on Self-Undulated Hyper-Thin Silicon-On-Insulator Films Ken Uchida, Junji Koga, Ryuji Ohba, Shin-ichi Takagi, Akira Toriumi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to fabricate high-temperature operating single-electron tunneling(SET)devices, it is considered that lithography techniques which can define nanometer-scale structures is essential.In this work, we report on a sub-μm silicon SET device fabricated on a hyper-thin silicon-on-insulator film of which surface is intentionally undulated by the alkaline treatment.In spite of the sub-μm device size, Coulomb blockade oscillations are demonstrated at 80K.In addition, the device shows memory functions even at 300K.These facts strongly indicate that Coulomb blockade effects or other small number electron effects can be utilized to implement the functionality in the conventional sub-μm Si devices even at 300K simply by utilizing the present treatment technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single-electron tunneling / Coulomb blockade / non-volatile memory / undulation / SOI |
| Paper # | ED99-295,SDM99-188 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Sub-μm Si Single-Electron Tunneling Devices on Self-Undulated Hyper-Thin Silicon-On-Insulator Films |
| Sub Title (in English) | |
| Keyword(1) | single-electron tunneling |
| Keyword(2) | Coulomb blockade |
| Keyword(3) | non-volatile memory |
| Keyword(4) | undulation |
| Keyword(5) | SOI |
| 1st Author's Name | Ken Uchida |
| 1st Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation() |
| 2nd Author's Name | Junji Koga |
| 2nd Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| 3rd Author's Name | Ryuji Ohba |
| 3rd Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| 4th Author's Name | Shin-ichi Takagi |
| 4th Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| 5th Author's Name | Akira Toriumi |
| 5th Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| Date | 2000/2/9 |
| Paper # | ED99-295,SDM99-188 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |