| Presentation | 2000/2/9 Mechanism of Potential Profile Formation in Si SETs using Pattern-Dependent Oxidation(PADOX) Seiji Horiguchi, Masao Nagase, Kenji Shiraishi, Hiroyuki Kageshima, Yasuo Takahashi, Katsumi Murase, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the origin of potential profile in Si SETs(single-electron transistors) fabricated using pattern-dependent oxidation (PADOX) making use of the geometric structure measured by AFM, the first-principles calculation and the effective potential method.A probable mechanism of the formation of potential profile responsible for SET operation has been shown.The reduction of width in a wire region produces a tunnel barrier through the quantum-mechanical size effect, while the compressive stress generated during PADOX in the wire region forms a potential well corresponding to an island in the tunnel barrier through the bandgap reduction due to strain. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si SET / PADOX / stress effect / strain effect / first-principles calculation / AFM / effective potential |
| Paper # | ED99-294,SDM99-187 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mechanism of Potential Profile Formation in Si SETs using Pattern-Dependent Oxidation(PADOX) |
| Sub Title (in English) | |
| Keyword(1) | Si SET |
| Keyword(2) | PADOX |
| Keyword(3) | stress effect |
| Keyword(4) | strain effect |
| Keyword(5) | first-principles calculation |
| Keyword(6) | AFM |
| Keyword(7) | effective potential |
| 1st Author's Name | Seiji Horiguchi |
| 1st Author's Affiliation | NTT Basic Research Laboratories() |
| 2nd Author's Name | Masao Nagase |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | Kenji Shiraishi |
| 3rd Author's Affiliation | NTT Basic Research Laboratories |
| 4th Author's Name | Hiroyuki Kageshima |
| 4th Author's Affiliation | NTT Basic Research Laboratories |
| 5th Author's Name | Yasuo Takahashi |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| 6th Author's Name | Katsumi Murase |
| 6th Author's Affiliation | NTT Basic Research Laboratories |
| Date | 2000/2/9 |
| Paper # | ED99-294,SDM99-187 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |