Presentation 2000/2/9
Oxidation of Si nano-structures for single-electron devices
M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Kurihara,
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Abstract(in English) Oxidized Si nanostructures on SOI substrates were evaluated by atomic force microscopy(AFM)and scanning electron microscopy(SEM).Quantitative AFM evaluations of the local Si thickness after oxidation revealed that the local oxidation rate strongly depends on the shape and size of the structures.Outline of the embedded Si structures in thermal oxide was clearly observed by SEM using 30kV electron beam.The combination of two nondestructive observation methods based on AFM and SEM provides detailed information on the three-dimensional shape of embedded Si nanodevices.
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Keyword(in English) Single-electron device / Si nanostructure / oxidation / AFM / SEM
Paper # ED99-293,SDM99-186
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Committee ED
Conference Date 2000/2/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Oxidation of Si nano-structures for single-electron devices
Sub Title (in English)
Keyword(1) Single-electron device
Keyword(2) Si nanostructure
Keyword(3) oxidation
Keyword(4) AFM
Keyword(5) SEM
1st Author's Name M. Nagase
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name A. Fujiwara
2nd Author's Affiliation NTT Basic Research Laboratories
3rd Author's Name K. Yamazaki
3rd Author's Affiliation NTT Basic Research Laboratories
4th Author's Name Y. Takahashi
4th Author's Affiliation NTT Basic Research Laboratories
5th Author's Name K. Kurihara
5th Author's Affiliation NTT Basic Research Laboratories
Date 2000/2/9
Paper # ED99-293,SDM99-186
Volume (vol) vol.99
Number (no) 615
Page pp.pp.-
#Pages 8
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