Presentation | 2000/2/9 Oxidation of Si nano-structures for single-electron devices M. Nagase, A. Fujiwara, K. Yamazaki, Y. Takahashi, K. Kurihara, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Oxidized Si nanostructures on SOI substrates were evaluated by atomic force microscopy(AFM)and scanning electron microscopy(SEM).Quantitative AFM evaluations of the local Si thickness after oxidation revealed that the local oxidation rate strongly depends on the shape and size of the structures.Outline of the embedded Si structures in thermal oxide was clearly observed by SEM using 30kV electron beam.The combination of two nondestructive observation methods based on AFM and SEM provides detailed information on the three-dimensional shape of embedded Si nanodevices. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single-electron device / Si nanostructure / oxidation / AFM / SEM |
Paper # | ED99-293,SDM99-186 |
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Conference Information | |
Committee | ED |
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Conference Date | 2000/2/9(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Oxidation of Si nano-structures for single-electron devices |
Sub Title (in English) | |
Keyword(1) | Single-electron device |
Keyword(2) | Si nanostructure |
Keyword(3) | oxidation |
Keyword(4) | AFM |
Keyword(5) | SEM |
1st Author's Name | M. Nagase |
1st Author's Affiliation | NTT Basic Research Laboratories() |
2nd Author's Name | A. Fujiwara |
2nd Author's Affiliation | NTT Basic Research Laboratories |
3rd Author's Name | K. Yamazaki |
3rd Author's Affiliation | NTT Basic Research Laboratories |
4th Author's Name | Y. Takahashi |
4th Author's Affiliation | NTT Basic Research Laboratories |
5th Author's Name | K. Kurihara |
5th Author's Affiliation | NTT Basic Research Laboratories |
Date | 2000/2/9 |
Paper # | ED99-293,SDM99-186 |
Volume (vol) | vol.99 |
Number (no) | 615 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |