| Presentation | 2000/2/9 Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation Yukio Yasuda, Kenta Izumikawa, Akira Sakai, Shigeaki Zaima, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated Si MOSFETs using focused-ion beam (FIB) implantation and investigated the Coulomb blockade phenomena in these devices.SiO_2 masks with narrow width were formed on Si substrates and one-dimensional FIB scanning was performed through the masks.This technique allows us to obtain nanomater-scale channnel-length and source / drain structures.Periodic oscillations of conductance, which correspond to the Coulomb blockade oscillations, were observed at temperatures below 30 K.The oscillation periods of gate voltage(V_g)were measured for the samples with different channnel length and found to increase as the channel length increased. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Coulomb blockade / MOSFETs / focused-ion beam / e-beam lithography / ECR plasma etching |
| Paper # | ED99-291,SDM99-184 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation |
| Sub Title (in English) | |
| Keyword(1) | Coulomb blockade |
| Keyword(2) | MOSFETs |
| Keyword(3) | focused-ion beam |
| Keyword(4) | e-beam lithography |
| Keyword(5) | ECR plasma etching |
| 1st Author's Name | Yukio Yasuda |
| 1st Author's Affiliation | Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University.() |
| 2nd Author's Name | Kenta Izumikawa |
| 2nd Author's Affiliation | Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University. |
| 3rd Author's Name | Akira Sakai |
| 3rd Author's Affiliation | Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University. |
| 4th Author's Name | Shigeaki Zaima |
| 4th Author's Affiliation | Center for Cooperative Research in Advanced Science and Technology, Nagoya University |
| Date | 2000/2/9 |
| Paper # | ED99-291,SDM99-184 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |