| Presentation | 2000/2/9 Fabrication of Single-Electron Devices by Selective Area MOVPE and Their Applications to Single-Electron Circuits F. Nakajima, J. Motohisa, T. Fukui, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated single electron devices by using selective area MOVPE and investigated their transport properties.GaAs/AlGaAs modulation doped heterostructures are grown on a GaAs(001)substrate partially masked with SiNx and narrow channel surrounded by facet sidewalls are formed near the top.The width of the channel is modulated by an appropriate patterning of the mask.By applying negative biases to a gate, a quantum dot connected with quantum wires through tunnel barriers are formed near the pinch-off voltage, as a result of the expansion of depletion layers.We successfully observed clear Coulomb blockade oscillations at low temperatures.We also fabricate logic circuits with an SET and a variable load resistance, and confirmed inverter operations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | selective area growth / single electron transistor / Coulomb blockade / single electron circuit / inverter |
| Paper # | ED99-290,SDM99-183 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2000/2/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Single-Electron Devices by Selective Area MOVPE and Their Applications to Single-Electron Circuits |
| Sub Title (in English) | |
| Keyword(1) | selective area growth |
| Keyword(2) | single electron transistor |
| Keyword(3) | Coulomb blockade |
| Keyword(4) | single electron circuit |
| Keyword(5) | inverter |
| 1st Author's Name | F. Nakajima |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | J. Motohisa |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 3rd Author's Name | T. Fukui |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 2000/2/9 |
| Paper # | ED99-290,SDM99-183 |
| Volume (vol) | vol.99 |
| Number (no) | 615 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |