Presentation | 2000/1/21 Variable Threshold Filed-Effect-Transistor with Paired Gates Fabricated by Using the Wafer-Bonding Techniqe Satoshi KODAMA, Tomofumi FURUTA, Noriyuki WATANABE, Hiroshi ITO, Atsushi KANDA, Masahiro MURAGUCHI, Tadao ISHIBASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigated a novel heterostructure field-effect transistor(HFET)with paired gates(PGs), where one gate is above and the other below the channel.Using the wafer-bonding technique, we succeeded in fabricating AlGaAs/InGaAs PG-HFETs on a 3-inch-diameter wafer.The static characteristics of the fabricated HFET indicate that the drain current(I_D)is controlled by the paired gates, providing maximum transconductance of 240 mS/mm.Since the drain current can be controlled by each gate voltage independently, the PG-HFET accepts two gate input signals and functions as a variable threshold HFET.PG-FETs have the unique feature of variable threshold voltage, higher transconductance, lower drain-source capacitance and better subthreshold characteristics.Thus, they will be valuable in creating a new class of microwave and digital circuits. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | wafer-bonding / variable threshold voltage / two-gate-input / HFET / InGaAs |
Paper # | ED99-279,MW99-203,ICD99-254 |
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Conference Information | |
Committee | ED |
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Conference Date | 2000/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Variable Threshold Filed-Effect-Transistor with Paired Gates Fabricated by Using the Wafer-Bonding Techniqe |
Sub Title (in English) | |
Keyword(1) | wafer-bonding |
Keyword(2) | variable threshold voltage |
Keyword(3) | two-gate-input |
Keyword(4) | HFET |
Keyword(5) | InGaAs |
1st Author's Name | Satoshi KODAMA |
1st Author's Affiliation | NTT Photonics Labs() |
2nd Author's Name | Tomofumi FURUTA |
2nd Author's Affiliation | NTT Photonics Labs |
3rd Author's Name | Noriyuki WATANABE |
3rd Author's Affiliation | NTT Photonics Labs |
4th Author's Name | Hiroshi ITO |
4th Author's Affiliation | NTT Photonics Labs |
5th Author's Name | Atsushi KANDA |
5th Author's Affiliation | NTT Photonics Labs |
6th Author's Name | Masahiro MURAGUCHI |
6th Author's Affiliation | NTT Electronics Corporation |
7th Author's Name | Tadao ISHIBASHI |
7th Author's Affiliation | NTT Photonics Labs |
Date | 2000/1/21 |
Paper # | ED99-279,MW99-203,ICD99-254 |
Volume (vol) | vol.99 |
Number (no) | 555 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |