| Presentation | 2000/3/17 Hydrogen and Carbon-related Defects in Heavily Carbon-doped GaAs Induced Degradation under Minority-carrier Injection Hiroshi FUSHIMI, Kazumi WADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper the degradation mechanism of HBTs is discussed, especially GaAs / AlGaAs HBTs with heavily carbon-doped base layer. Two types of the device degradation are revealed, i.e., hydrogen related degradation and carbon related degradation. Hydrogen precipitates and carbon precipitates are formed by charge state effect. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | C-doped GaAs / Hydrogen / C-related Defect / Charge State Effect / Reconbination Enhanced Defect Reaction |
| Paper # | R99-44,CPM99-167 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2000/3/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen and Carbon-related Defects in Heavily Carbon-doped GaAs Induced Degradation under Minority-carrier Injection |
| Sub Title (in English) | |
| Keyword(1) | C-doped GaAs |
| Keyword(2) | Hydrogen |
| Keyword(3) | C-related Defect |
| Keyword(4) | Charge State Effect |
| Keyword(5) | Reconbination Enhanced Defect Reaction |
| 1st Author's Name | Hiroshi FUSHIMI |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Kazumi WADA |
| 2nd Author's Affiliation | Massachusetts Institute of Technology |
| Date | 2000/3/17 |
| Paper # | R99-44,CPM99-167 |
| Volume (vol) | vol.99 |
| Number (no) | 712 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |