| Presentation | 1997/8/4 Piezoresistance Effects in p-Type Si and Ge Y Ohmura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The 1st- and 2nd-order piezoresistance coefficients which agree well with experimental ones have been obtained from conductivities calculated for p-type Si and Ge with and without stress, using the well-known sixfold valence band structure. The fractional mobility change for each hole is the same order of magnitude as piezoresistance, while the hole concentration change is several orders of magnitude smaller. These effects have been explained in terms of density-of-states changes near hole band edges. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | piezoresistance effect / p-Si / p-Ge / valence band structure / strain sensor |
| Paper # | CPM97-52 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 1997/8/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Piezoresistance Effects in p-Type Si and Ge |
| Sub Title (in English) | |
| Keyword(1) | piezoresistance effect |
| Keyword(2) | p-Si |
| Keyword(3) | p-Ge |
| Keyword(4) | valence band structure |
| Keyword(5) | strain sensor |
| 1st Author's Name | Y Ohmura |
| 1st Author's Affiliation | Dept. Electronic Engineering, Iwaki Meisei University() |
| Date | 1997/8/4 |
| Paper # | CPM97-52 |
| Volume (vol) | vol.97 |
| Number (no) | 220 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |