Presentation 2002/2/15
1.55 μm Buried Heterostructure VCSELs
Yoshitaka Ohiso, Hiroshi Okamoto, Ryuzou Iga, Kenji Kishi, Chikara Amano,
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Abstract(in English) We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer-fusion technology enables InP-based buried heterostructure VCSELs to be fabricated on GaAs/AlAs distributed Bragg reflectors. Threshold current density is independent of mesa size, and a 5-μm VCSEL exhibits a threshold current as low as 380 μA at 20 ℃ and a single transverse mode up to the maximum optical output power under CW operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Buried heterostructure / VCSEL / wafer fusion
Paper # LQE2001-144
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Committee LQE
Conference Date 2002/2/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.55 μm Buried Heterostructure VCSELs
Sub Title (in English)
Keyword(1) Buried heterostructure
Keyword(2) VCSEL
Keyword(3) wafer fusion
1st Author's Name Yoshitaka Ohiso
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name Hiroshi Okamoto
2nd Author's Affiliation NTT Photonics Laboratories
3rd Author's Name Ryuzou Iga
3rd Author's Affiliation NTT Photonics Laboratories
4th Author's Name Kenji Kishi
4th Author's Affiliation NTT Photonics Laboratories
5th Author's Name Chikara Amano
5th Author's Affiliation NTT Photonics Laboratories
Date 2002/2/15
Paper # LQE2001-144
Volume (vol) vol.101
Number (no) 657
Page pp.pp.-
#Pages 6
Date of Issue