Presentation | 2002/2/15 1.55 μm Buried Heterostructure VCSELs Yoshitaka Ohiso, Hiroshi Okamoto, Ryuzou Iga, Kenji Kishi, Chikara Amano, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting lasers (VCSELs). Thin-film wafer-fusion technology enables InP-based buried heterostructure VCSELs to be fabricated on GaAs/AlAs distributed Bragg reflectors. Threshold current density is independent of mesa size, and a 5-μm VCSEL exhibits a threshold current as low as 380 μA at 20 ℃ and a single transverse mode up to the maximum optical output power under CW operation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Buried heterostructure / VCSEL / wafer fusion |
Paper # | LQE2001-144 |
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Committee | LQE |
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Conference Date | 2002/2/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 1.55 μm Buried Heterostructure VCSELs |
Sub Title (in English) | |
Keyword(1) | Buried heterostructure |
Keyword(2) | VCSEL |
Keyword(3) | wafer fusion |
1st Author's Name | Yoshitaka Ohiso |
1st Author's Affiliation | NTT Photonics Laboratories() |
2nd Author's Name | Hiroshi Okamoto |
2nd Author's Affiliation | NTT Photonics Laboratories |
3rd Author's Name | Ryuzou Iga |
3rd Author's Affiliation | NTT Photonics Laboratories |
4th Author's Name | Kenji Kishi |
4th Author's Affiliation | NTT Photonics Laboratories |
5th Author's Name | Chikara Amano |
5th Author's Affiliation | NTT Photonics Laboratories |
Date | 2002/2/15 |
Paper # | LQE2001-144 |
Volume (vol) | vol.101 |
Number (no) | 657 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |