Presentation 2002/2/15
1.3μm VCSELs With GaAsSb/GaAs Quantum Wells
Kaori Kurihara, Mitsuki Yamada, Takayoshi Anan, Kenichi Nishi, Shigeo Sugou,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) 1.3-μm vertical-cavity surface-emitting lasers (VCSELs) have been recognized as an ideal optical source for future high-capacity LANs. We have proposed GaAsSb quantum wells (QWs) on GaAs for the active layer of a 1.3-μm VCSEL with highly reflective GaAS/AlGaAs distributed Bragg reflectors (DBRs). Here we report high-quality GaAsSb QWs produced by both gas source molecular beam epitaxy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE), which showed almost the same structural and optical characteristics. Using these QWs, we demonstrated CW lasing of a 1.295-μm VCSEL with a threshold current of 1.1 mA and characteristic temperature of 100 K. The eye opening of a 1.27-μm VCSEL used for 2.5-Gbps 10-km single mode fiber transmission was clear. These superior VCSEL characteristics show that GaAsSb VCSELs are a promising light source for next-generation optical transmitters.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) VCSEL / GaAsSb / GSMBE / MOVPE / 10Gbps-LAN
Paper # LQE2001-143
Date of Issue

Conference Information
Committee LQE
Conference Date 2002/2/15(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.3μm VCSELs With GaAsSb/GaAs Quantum Wells
Sub Title (in English)
Keyword(1) VCSEL
Keyword(2) GaAsSb
Keyword(3) GSMBE
Keyword(4) MOVPE
Keyword(5) 10Gbps-LAN
1st Author's Name Kaori Kurihara
1st Author's Affiliation Photonic and Wireless Device Research Laboratories, NEC Corporation()
2nd Author's Name Mitsuki Yamada
2nd Author's Affiliation Photonic and Wireless Device Research Laboratories, NEC Corporation
3rd Author's Name Takayoshi Anan
3rd Author's Affiliation Photonic and Wireless Device Research Laboratories, NEC Corporation
4th Author's Name Kenichi Nishi
4th Author's Affiliation Photonic and Wireless Device Research Laboratories, NEC Corporation
5th Author's Name Shigeo Sugou
5th Author's Affiliation Photonic and Wireless Device Research Laboratories, NEC Corporation
Date 2002/2/15
Paper # LQE2001-143
Volume (vol) vol.101
Number (no) 657
Page pp.pp.-
#Pages 6
Date of Issue