| Presentation | 2002/2/15 Crystal growth and characteristics of GaN-Based LEDs on Si substrates N. Nishikawa, B. Zhang, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report characteristics of InGaN multiple-quantum-well (MQW) green Light-emitting diodes (LEDs) on Si (111) substrates, The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al_0.27Ga_0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7V, a series resistance of 100Ω, an optical output power of 20mΩ, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / Si 上 GaN / InGaN LED / MQW / AlGaN/AlN intermediate layer |
| Paper # | LQE2001-142 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/2/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystal growth and characteristics of GaN-Based LEDs on Si substrates |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | Si 上 GaN |
| Keyword(3) | InGaN LED |
| Keyword(4) | MQW |
| Keyword(5) | AlGaN/AlN intermediate layer |
| 1st Author's Name | N. Nishikawa |
| 1st Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology() |
| 2nd Author's Name | B. Zhang |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 3rd Author's Name | H. Ishikawa |
| 3rd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 4th Author's Name | T. Egawa |
| 4th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 5th Author's Name | T. Jimbo |
| 5th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 6th Author's Name | M. Umeno |
| 6th Author's Affiliation | Dept. Electronic Engineering, Chubu Univ. |
| Date | 2002/2/15 |
| Paper # | LQE2001-142 |
| Volume (vol) | vol.101 |
| Number (no) | 657 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |