| Presentation | 2005/9/20 Wafer Orientation Dependence of the C-V Characteristics due to QM Effects for the Surrounding Gate Transistor Hideo HANEDA, Wataru SAKAMOTO, Iliya I. PESIC, Hiroki NAKAMURA, Hiroshi SAKURABA, Fujio MASUOKA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we show the electron distributions and the C-V characteristics for the surrounding gate transistor (SGT). The SGT structure is defined by a cylindrical silicon pillar that is completely surrounded by the gate electrode and is vertically arranged on top of a silicon wafer. In order to correctly analyze the QM effects that occur within the SGT, we have used a self-consistent method of the coupled 1D Schrodinger-2D Poisson system that properly includes effective mass dependency on the crystal orientation. As a result, we have successfully shown that both the QM carrier distribution along the Si-SiO_2 interface and the C-V characteristics will vary with the silicon pillar surface and wafer crystal orientations. We have also shown that the wafer orientation dependence of the QM C-V characteristics for the SGT is reduced when compared to the QM C-V characteristics of the planar MOSFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Surrounding Gate Transistor (SGT) / Quantum Mechanical Effects (QMEs) |
| Paper # | VLD2005-53,SDM2005-172 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2005/9/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Wafer Orientation Dependence of the C-V Characteristics due to QM Effects for the Surrounding Gate Transistor |
| Sub Title (in English) | |
| Keyword(1) | Surrounding Gate Transistor (SGT) |
| Keyword(2) | Quantum Mechanical Effects (QMEs) |
| 1st Author's Name | Hideo HANEDA |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Wataru SAKAMOTO |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Iliya I. PESIC |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Hiroki NAKAMURA |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | Hiroshi SAKURABA |
| 5th Author's Affiliation | Miyagi National College of Technology |
| 6th Author's Name | Fujio MASUOKA |
| 6th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 2005/9/20 |
| Paper # | VLD2005-53,SDM2005-172 |
| Volume (vol) | vol.105 |
| Number (no) | 308 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |