Presentation 2005/9/20
Density-Gradient Analysis of MOSFET, DGSOI and TriGateSOI
Hiroyuki TAKASHINO, Yasuyuki OHKURA, Toshiyuki ENDA, Tetsunori WADA,
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Abstract(in English) The Density Gradient Model which is considered to well express quantum effects appearing in scaling down and complex MOSFET structures has been implemented in Selete 3D Device Simulator HyDeLEOS. Using this simulator, bulk MOSFET, Double Gate SOI(DGSOI) and Triple Gate SOI(TriGateSOI) analysis have been done and compared to the analysis of those structures with the conventional method.
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Keyword(in English) Quantum Effects / Density Gradient Model / 3Dimensional Device Simulator
Paper # VLD2005-50,SDM2005-169
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Committee VLD
Conference Date 2005/9/20(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Density-Gradient Analysis of MOSFET, DGSOI and TriGateSOI
Sub Title (in English)
Keyword(1) Quantum Effects
Keyword(2) Density Gradient Model
Keyword(3) 3Dimensional Device Simulator
1st Author's Name Hiroyuki TAKASHINO
1st Author's Affiliation Semiconductor Leading Edge Technologies, Inc.()
2nd Author's Name Yasuyuki OHKURA
2nd Author's Affiliation Semiconductor Leading Edge Technologies, Inc.
3rd Author's Name Toshiyuki ENDA
3rd Author's Affiliation Semiconductor Leading Edge Technologies, Inc.
4th Author's Name Tetsunori WADA
4th Author's Affiliation Semiconductor Leading Edge Technologies, Inc.
Date 2005/9/20
Paper # VLD2005-50,SDM2005-169
Volume (vol) vol.105
Number (no) 308
Page pp.pp.-
#Pages 6
Date of Issue