Presentation | 2005/9/20 Density-Gradient Analysis of MOSFET, DGSOI and TriGateSOI Hiroyuki TAKASHINO, Yasuyuki OHKURA, Toshiyuki ENDA, Tetsunori WADA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The Density Gradient Model which is considered to well express quantum effects appearing in scaling down and complex MOSFET structures has been implemented in Selete 3D Device Simulator HyDeLEOS. Using this simulator, bulk MOSFET, Double Gate SOI(DGSOI) and Triple Gate SOI(TriGateSOI) analysis have been done and compared to the analysis of those structures with the conventional method. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum Effects / Density Gradient Model / 3Dimensional Device Simulator |
Paper # | VLD2005-50,SDM2005-169 |
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Committee | VLD |
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Conference Date | 2005/9/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Density-Gradient Analysis of MOSFET, DGSOI and TriGateSOI |
Sub Title (in English) | |
Keyword(1) | Quantum Effects |
Keyword(2) | Density Gradient Model |
Keyword(3) | 3Dimensional Device Simulator |
1st Author's Name | Hiroyuki TAKASHINO |
1st Author's Affiliation | Semiconductor Leading Edge Technologies, Inc.() |
2nd Author's Name | Yasuyuki OHKURA |
2nd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
3rd Author's Name | Toshiyuki ENDA |
3rd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
4th Author's Name | Tetsunori WADA |
4th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
Date | 2005/9/20 |
Paper # | VLD2005-50,SDM2005-169 |
Volume (vol) | vol.105 |
Number (no) | 308 |
Page | pp.pp.- |
#Pages | 6 |
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