| Presentation | 2005-08-19 Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories Kazuo OTSUGA, Hideaki KURATA, Kenji KOZAKAI, Satoshi NODA, Yoshitaka SASAGO, Tsuyoshi ARIGANE, Tetsufumi KAWAMURA, Takashi KOBAYASHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed a selective-capacitance constant-charge-injection programming scheme for multilevel AG-AND flash memories. This scheme minimizes the programming time of each Vth level using optimized capacitance values. In 4-Gbit AG-AND flash memory, a local bit line capacitance is utilized for middle-level, and sum of local and global bit line capacitance is utilized for top-level. A programming throughput of 10MB/s is achieved using this new scheme. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash memory / AG-AND / Multilevel Technology / Constant-Charge-Injection Programming |
| Paper # | SDM2005-153,ICD2005-92 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/8/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories |
| Sub Title (in English) | |
| Keyword(1) | Flash memory |
| Keyword(2) | AG-AND |
| Keyword(3) | Multilevel Technology |
| Keyword(4) | Constant-Charge-Injection Programming |
| 1st Author's Name | Kazuo OTSUGA |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | Hideaki KURATA |
| 2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 3rd Author's Name | Kenji KOZAKAI |
| 3rd Author's Affiliation | Renesas Technology Corp. |
| 4th Author's Name | Satoshi NODA |
| 4th Author's Affiliation | Renesas Technology Corp. |
| 5th Author's Name | Yoshitaka SASAGO |
| 5th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 6th Author's Name | Tsuyoshi ARIGANE |
| 6th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 7th Author's Name | Tetsufumi KAWAMURA |
| 7th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 8th Author's Name | Takashi KOBAYASHI |
| 8th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| Date | 2005-08-19 |
| Paper # | SDM2005-153,ICD2005-92 |
| Volume (vol) | vol.105 |
| Number (no) | 233 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |