| Presentation | 2005-08-19 Improvement of threshold voltage asymmetry by Al compositional modulation and partially silicided gate electrode for Hf-based high-k CMOSFETs Masaru KADOSHIMA, Arito OGAWA, Masashi TAKAHASHI, Hiroyuki OTA, Nobuyuki MISE, Kunihiko IWAMOTO, Shinji MIGITA, Hideaki FUJIWARA, Hideki SATAKE, Toshihide NABATAME, Akira TORIUMI, |
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| Abstract(in Japanese) | (See Japanese page) | |||
| Abstract(in English) | Threshold voltage (V_ | ) tuning by engineering Fermi-level pinning (FLP) on HfAlO_x(N) dielectrics is demonstrated for CMOSFETs. Two kinds of methods have been proposed. One is to control the Al concentration in the HfAlO_x(N) dielectrics to modulate the FLP energy position for the V_ | symmetry. The other is the doping into the partially silicided platinum (PtSi_| for 45 nm-node low standby-power CMOS devices.
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| Keyword(in Japanese) | (See Japanese page) | |||
| Keyword(in English) | high-k dielectric / threshold voltage tuning / Al compositional adjustment / partially silicided gate / doping effect | |||
| Paper # | SDM2005-148,ICD2005-87 | |||
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/8/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of threshold voltage asymmetry by Al compositional modulation and partially silicided gate electrode for Hf-based high-k CMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | high-k dielectric |
| Keyword(2) | threshold voltage tuning |
| Keyword(3) | Al compositional adjustment |
| Keyword(4) | partially silicided gate |
| Keyword(5) | doping effect |
| 1st Author's Name | Masaru KADOSHIMA |
| 1st Author's Affiliation | MIRAI-ASET() |
| 2nd Author's Name | Arito OGAWA |
| 2nd Author's Affiliation | MIRAI-ASET |
| 3rd Author's Name | Masashi TAKAHASHI |
| 3rd Author's Affiliation | MIRAI-ASET |
| 4th Author's Name | Hiroyuki OTA |
| 4th Author's Affiliation | MIRAI-ASRC, AIST |
| 5th Author's Name | Nobuyuki MISE |
| 5th Author's Affiliation | MIRAI-ASET |
| 6th Author's Name | Kunihiko IWAMOTO |
| 6th Author's Affiliation | MIRAI-ASET |
| 7th Author's Name | Shinji MIGITA |
| 7th Author's Affiliation | MIRAI-ASRC, AIST |
| 8th Author's Name | Hideaki FUJIWARA |
| 8th Author's Affiliation | MIRAI-ASET |
| 9th Author's Name | Hideki SATAKE |
| 9th Author's Affiliation | MIRAI-ASET |
| 10th Author's Name | Toshihide NABATAME |
| 10th Author's Affiliation | MIRAI-ASET |
| 11th Author's Name | Akira TORIUMI |
| 11th Author's Affiliation | MIRAI-ASRC, AIST:The University of Tokyo |
| Date | 2005-08-19 |
| Paper # | SDM2005-148,ICD2005-87 |
| Volume (vol) | vol.105 |
| Number (no) | 233 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |