| Presentation | 2005-08-18 Experimental Study on the Mobility Superiority in (110)-oriented Ultra-thin Body pMOSFETs Gen TSUTSUI, Masumi SAITOH, Toshiro HIRAMOTO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ultra-thin body (UTB) SOI MOSFET is one of the most promising structures for future VLSIs because of its high short channel effect immunity. Mobility in UTB pMOSFETs in conventional (100) substrate has been experimentally investigated, and severe mobility degradation has been observed as tsor is reduced below 5nm. In this study, hole mobility in (110)-oriented UTB pMOSFETs is investigated. It is shown that the mobility, which is much higher than that in the universal curve in conventional (100)-oriented pMOSFET, is not degraded until tsor is thinned to 3nm. The high mobility in the UTB regime in (110) pMOSFET is attributed to subband modulation by carrier confinement and heavier hole effective mass normal to channel surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | (110) / hole mobility / phonon scattering / quantum confinement effect / SOI thickness fluctuation induced scattering / ultra-thin body SOI MOSFET |
| Paper # | SDM2005-133,ICD2005-72 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/8/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experimental Study on the Mobility Superiority in (110)-oriented Ultra-thin Body pMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | (110) |
| Keyword(2) | hole mobility |
| Keyword(3) | phonon scattering |
| Keyword(4) | quantum confinement effect |
| Keyword(5) | SOI thickness fluctuation induced scattering |
| Keyword(6) | ultra-thin body SOI MOSFET |
| 1st Author's Name | Gen TSUTSUI |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Masumi SAITOH |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Toshiro HIRAMOTO |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2005-08-18 |
| Paper # | SDM2005-133,ICD2005-72 |
| Volume (vol) | vol.105 |
| Number (no) | 232 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |