Presentation 2005-07-15
Characterization of GaSb/AlSb Quantum Cascade Laser Structure on GaAs substrate
Iwao HOSAKO, Hiroaki YASUDA, Sen MIYASHITA, Mikhail A. PATRASHIN,
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Abstract(in English) GaSb/AlSb quantum cascade laser structure on GaAs substrate was fabricated and evaluated. Design frequency of oscillation was 2.6 THz. A terahertz electroluminescence at 4K was measured by using gallium doped germanium photodetector. With an increase of injection current, above certain threshold, an abrupt increase of luminescence has been observed.
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Keyword(in English) Quantum Cascade Laser / GaSb/AlSb MQW / Terahertz waves
Paper # MW2005-56,OPE2005-40
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Committee MW
Conference Date 2005/7/8(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Characterization of GaSb/AlSb Quantum Cascade Laser Structure on GaAs substrate
Sub Title (in English)
Keyword(1) Quantum Cascade Laser
Keyword(2) GaSb/AlSb MQW
Keyword(3) Terahertz waves
1st Author's Name Iwao HOSAKO
1st Author's Affiliation National Institute of information and Communications Technology()
2nd Author's Name Hiroaki YASUDA
2nd Author's Affiliation National Institute of information and Communications Technology
3rd Author's Name Sen MIYASHITA
3rd Author's Affiliation NTT Advanced Technologies Corporation
4th Author's Name Mikhail A. PATRASHIN
4th Author's Affiliation National Institute of information and Communications Technology
Date 2005-07-15
Paper # MW2005-56,OPE2005-40
Volume (vol) vol.105
Number (no) 181
Page pp.pp.-
#Pages 3
Date of Issue