Presentation 1994/6/15
High-reflectivity(99.8%)InGaP/GaAs multilayer reflector for highly reliable 0.98-μm VCSELs
Kazunori Shinoda, Kiyohisa Hiramoto, Kazuhisa Uomi, Tomonobu Tsuchiya,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report on a 45-period InGaP, GaAs multilayer with high reflectivity of 99.8% grown by lowpressure MOCVD for highly reliable 0.98-μm InGaAs vertical-cavity surface-emitting lasers(VC SELs).This value is the highest ever reported for Al-free semic- onductor multilayers.In addition,the stability of the layer thickness during the epitaxial growth is fully discussed from the viewpoint of the asymmetrical reflectivity spectrum.We show that the layer,thickness slightly decreases(1%)during growth.
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Keyword(in English) Surface-emitting laser / Semiconductor multilayer / InGaP/aAs / High reflectivity
Paper # LQE94-22
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Committee LQE
Conference Date 1994/6/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-reflectivity(99.8%)InGaP/GaAs multilayer reflector for highly reliable 0.98-μm VCSELs
Sub Title (in English)
Keyword(1) Surface-emitting laser
Keyword(2) Semiconductor multilayer
Keyword(3) InGaP/aAs
Keyword(4) High reflectivity
1st Author's Name Kazunori Shinoda
1st Author's Affiliation Central Research Laboratory,Hitachi()
2nd Author's Name Kiyohisa Hiramoto
2nd Author's Affiliation Central Research Laboratory,Hitachi
3rd Author's Name Kazuhisa Uomi
3rd Author's Affiliation Central Research Laboratory,Hitachi
4th Author's Name Tomonobu Tsuchiya
4th Author's Affiliation Central Research Laboratory,Hitachi
Date 1994/6/15
Paper # LQE94-22
Volume (vol) vol.94
Number (no) 87
Page pp.pp.-
#Pages 6
Date of Issue