| Presentation | 1994/10/28 Effects of A1203/SiNx Double-Layered Gate Dielectric on the Electrical characteristics of a-Si:H TFT , |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 1994/10/28(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of A1203/SiNx Double-Layered Gate Dielectric on the Electrical characteristics of a-Si:H TFT |
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| 1st Author's Affiliation | () |
| Date | 1994/10/28 |
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| Volume (vol) | vol.94 |
| Number (no) | 308 |
| Page | pp.pp.- |
| #Pages | 10 |
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