| Presentation | 1994/7/26 Stress-Induced Low-Level Leakage Mechanism in Ultrathin Silicon Dioxide Films Mikihiro Kimura, Hiroshi Koyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Stress-induced low-level leakage current in ultrathin silicon dioxide films cannot be fully explained by generations of oxide trap charges and interface state at the Si, SiO_2 interface,but is coffelated with generation of neutral oxide traps inside of the oxide.The conduction mechanism is explained by modified Fowler- Nordheim tunneling from the leakage spot,generatso the cathode interface,to the reutrid oxide tfap level,lower in energy than the SiO_2 barrier height. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS / Ultrathin Oxide / Oxide Trap Charges / Interface State / Neutral Trap |
| Paper # | SDM94-47 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress-Induced Low-Level Leakage Mechanism in Ultrathin Silicon Dioxide Films |
| Sub Title (in English) | |
| Keyword(1) | MOS |
| Keyword(2) | Ultrathin Oxide |
| Keyword(3) | Oxide Trap Charges |
| Keyword(4) | Interface State |
| Keyword(5) | Neutral Trap |
| 1st Author's Name | Mikihiro Kimura |
| 1st Author's Affiliation | ULSI Laboratory,Mitsubishi Electric() |
| 2nd Author's Name | Hiroshi Koyama |
| 2nd Author's Affiliation | ULSI Laboratory,Mitsubishi Electric |
| Date | 1994/7/26 |
| Paper # | SDM94-47 |
| Volume (vol) | vol.94 |
| Number (no) | 185 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |