Presentation 1994/3/18
Newly Developed Activated Fault Imaging Technique for LSI Fault Localization
Toyokazu Nakamura, Yasuko Hanagama, Hidegi Ogane, Kenji Morohashi,
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Abstract(in English) Because of increasing die size and higher circuit integration in LSI technology,failure analysis of LSIs is becoming more difficult and time-cosuming.LSI fault localization method,using voltage contrast image developed by NEC,is very effective in reducing failure analysis time.The method has been applied to failure analysis of many kinds of Logic LSI,and we have succeeded in analyzing the samples in 90%of cases.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Voltage contrast image / Logic LSI / Fault localization / EB tester
Paper # R93-75,CPM93-141
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Committee R
Conference Date 1994/3/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Newly Developed Activated Fault Imaging Technique for LSI Fault Localization
Sub Title (in English)
Keyword(1) Voltage contrast image
Keyword(2) Logic LSI
Keyword(3) Fault localization
Keyword(4) EB tester
1st Author's Name Toyokazu Nakamura
1st Author's Affiliation NEC()
2nd Author's Name Yasuko Hanagama
2nd Author's Affiliation NEC
3rd Author's Name Hidegi Ogane
3rd Author's Affiliation NEC Glass Component
4th Author's Name Kenji Morohashi
4th Author's Affiliation Schulumberger K.K.
Date 1994/3/18
Paper # R93-75,CPM93-141
Volume (vol) vol.93
Number (no) 522
Page pp.pp.-
#Pages 4
Date of Issue