| Presentation | 1994/3/18 New prediction model of geometry effects on gate oxide reliability Makoto Hamada, Ken Shono, Kenji Ishida, Miki Tanaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Reliability of gate oxides is affected by geometry of gate electrode.In this work,new test structure which allow independent splits of width,length and area of gate electrodes was developed to extract coefficients of model equation.Model equation for QBD has two terms which are intrinsic and defective effect of whidth, length and area of gate electrode respectively.Good agreement between experimental and calculated QBD was obtaind.Calculated results showed QBD(C, cm_2)increases as reduction of gate length. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate oxide / QBD / TDDB |
| Paper # | R93-72,CPM93-138 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 1994/3/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | New prediction model of geometry effects on gate oxide reliability |
| Sub Title (in English) | |
| Keyword(1) | Gate oxide |
| Keyword(2) | QBD |
| Keyword(3) | TDDB |
| 1st Author's Name | Makoto Hamada |
| 1st Author's Affiliation | Fujitsu() |
| 2nd Author's Name | Ken Shono |
| 2nd Author's Affiliation | Fujitsu |
| 3rd Author's Name | Kenji Ishida |
| 3rd Author's Affiliation | Fujitsu |
| 4th Author's Name | Miki Tanaka |
| 4th Author's Affiliation | Fujitsu |
| Date | 1994/3/18 |
| Paper # | R93-72,CPM93-138 |
| Volume (vol) | vol.93 |
| Number (no) | 522 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |