Presentation 1994/2/16
Dependence of base thickness of electrical properties for In/BRBO/ STO(Nb)transistor(I)
Takehiko Makita, Fumihiko Toda, Hitoshi Abe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The In, (Ba,Rb)BiO_3/SrTiO_3(Nb-doped)transistor was fabricated and dependence of base thickness of electrical properties was investigated.The(Ba,Rb)BiO_3 thin films was grown on Nb-soped SrTiO_3(110)substrate by molecular beam epitaxy using distilled ozone at substrate tmeperature of ~370℃.Thickness of base films w as controlled by deposition time.Output characteristics for the In(Ba,Rb)BiO_3/SrTiO_3(Nb)transistor in common-base configuration were measured and transport coefficience(α)from output characteris tics depended on base thickness.Characteristic length of transport coefficience was independent of temperature.Therefore carrier in base film was scattering by the impurity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) In/Ba,Rb)BiO_3/rTiO_3(Nb)transistor / Base thickness / Transport coefficience
Paper # SCE93-67,CPM93-121
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Conference Information
Committee SCE
Conference Date 1994/2/16(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dependence of base thickness of electrical properties for In/BRBO/ STO(Nb)transistor(I)
Sub Title (in English)
Keyword(1) In/Ba,Rb)BiO_3/rTiO_3(Nb)transistor
Keyword(2) Base thickness
Keyword(3) Transport coefficience
1st Author's Name Takehiko Makita
1st Author's Affiliation Oki Electric Industry Co.,Ltd.()
2nd Author's Name Fumihiko Toda
2nd Author's Affiliation Oki Electric Industry Co.,Ltd.
3rd Author's Name Hitoshi Abe
3rd Author's Affiliation Oki Electric Industry Co.,Ltd.
Date 1994/2/16
Paper # SCE93-67,CPM93-121
Volume (vol) vol.93
Number (no) 461
Page pp.pp.-
#Pages 6
Date of Issue