Presentation 1994/2/16
Fabrication of Submicrometer-Sizd SIS Junctions
Takashi Noguchi, Akihiro Sakamoto, Satoshi Ochiai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new fabrication process are proposed for high-quality and high current-density SIS junctions,which are applicable to SIS mixers in the submillimeter-wave region.Before the deposition of insulator through the selfalligned photoresist mask,a thick anodized oxide layer was formed around SIS junctions.By the introduction of the anodization process,high-quality SIS junctions with the size of submicrometer have been successfully fabricated. Submicrometer sized-SIS junctions with current densities larger than 10kA, cm^2 have also been succeeded with the new process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SIS junction / SIS mixer / submillimeter-wave receiver / anodization / submicrometer
Paper # SCE93-64,CPM93-118
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Conference Information
Committee SCE
Conference Date 1994/2/16(1days)
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Paper Information
Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Submicrometer-Sizd SIS Junctions
Sub Title (in English)
Keyword(1) SIS junction
Keyword(2) SIS mixer
Keyword(3) submillimeter-wave receiver
Keyword(4) anodization
Keyword(5) submicrometer
1st Author's Name Takashi Noguchi
1st Author's Affiliation Nobeyama Radio Observatory()
2nd Author's Name Akihiro Sakamoto
2nd Author's Affiliation Nobeyama Radio Observatory
3rd Author's Name Satoshi Ochiai
3rd Author's Affiliation Communication Research Laboratory
Date 1994/2/16
Paper # SCE93-64,CPM93-118
Volume (vol) vol.93
Number (no) 461
Page pp.pp.-
#Pages 6
Date of Issue