Presentation | 1994/2/16 Fabrication of Submicrometer-Sizd SIS Junctions Takashi Noguchi, Akihiro Sakamoto, Satoshi Ochiai, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A new fabrication process are proposed for high-quality and high current-density SIS junctions,which are applicable to SIS mixers in the submillimeter-wave region.Before the deposition of insulator through the selfalligned photoresist mask,a thick anodized oxide layer was formed around SIS junctions.By the introduction of the anodization process,high-quality SIS junctions with the size of submicrometer have been successfully fabricated. Submicrometer sized-SIS junctions with current densities larger than 10kA, cm^2 have also been succeeded with the new process. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SIS junction / SIS mixer / submillimeter-wave receiver / anodization / submicrometer |
Paper # | SCE93-64,CPM93-118 |
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Conference Information | |
Committee | SCE |
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Conference Date | 1994/2/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Chair | |
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Assistant |
Paper Information | |
Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of Submicrometer-Sizd SIS Junctions |
Sub Title (in English) | |
Keyword(1) | SIS junction |
Keyword(2) | SIS mixer |
Keyword(3) | submillimeter-wave receiver |
Keyword(4) | anodization |
Keyword(5) | submicrometer |
1st Author's Name | Takashi Noguchi |
1st Author's Affiliation | Nobeyama Radio Observatory() |
2nd Author's Name | Akihiro Sakamoto |
2nd Author's Affiliation | Nobeyama Radio Observatory |
3rd Author's Name | Satoshi Ochiai |
3rd Author's Affiliation | Communication Research Laboratory |
Date | 1994/2/16 |
Paper # | SCE93-64,CPM93-118 |
Volume (vol) | vol.93 |
Number (no) | 461 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |