Presentation 2005-05-19
Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section
Tae Woung Jeong, Koichi IIYAMA, Saburo TAKAMIYA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Fabrication and characterization of InP/InGaAs heterojunction phototransistor with lateral photodiode is described. The feature of the device is that it is two-terminal device with interdigital collector and emitter electrodes. The responsivity is 5A/W, the current gain is 24, and the maximum bandwidth is 60MHz. The 2-dimentional device simulation of the HPT was carried out, showing increased bandwidth of 10 GHz is achieved at the sacrifice of the sensitivity and the current gain.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Phototransistor / Heterojunction / Lateral photodiode
Paper # LQE2005-1
Date of Issue

Conference Information
Committee LQE
Conference Date 2005/5/12(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section
Sub Title (in English)
Keyword(1) Phototransistor
Keyword(2) Heterojunction
Keyword(3) Lateral photodiode
1st Author's Name Tae Woung Jeong
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Koichi IIYAMA
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Saburo TAKAMIYA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
Date 2005-05-19
Paper # LQE2005-1
Volume (vol) vol.105
Number (no) 52
Page pp.pp.-
#Pages 4
Date of Issue