Presentation | 2005-05-19 Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section Tae Woung Jeong, Koichi IIYAMA, Saburo TAKAMIYA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Fabrication and characterization of InP/InGaAs heterojunction phototransistor with lateral photodiode is described. The feature of the device is that it is two-terminal device with interdigital collector and emitter electrodes. The responsivity is 5A/W, the current gain is 24, and the maximum bandwidth is 60MHz. The 2-dimentional device simulation of the HPT was carried out, showing increased bandwidth of 10 GHz is achieved at the sacrifice of the sensitivity and the current gain. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Phototransistor / Heterojunction / Lateral photodiode |
Paper # | LQE2005-1 |
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Committee | LQE |
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Conference Date | 2005/5/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Two terminal InP/InGaAs heterojunction phototransistor with lateral photodiode as sensing section |
Sub Title (in English) | |
Keyword(1) | Phototransistor |
Keyword(2) | Heterojunction |
Keyword(3) | Lateral photodiode |
1st Author's Name | Tae Woung Jeong |
1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
2nd Author's Name | Koichi IIYAMA |
2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
3rd Author's Name | Saburo TAKAMIYA |
3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
Date | 2005-05-19 |
Paper # | LQE2005-1 |
Volume (vol) | vol.105 |
Number (no) | 52 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |